Portal de Periódicos da CAPES

An aluminum‐germanium eutectic structure for silicon wafer bonding technology

2005; Wiley; Volume: 2; Issue: 10 Linguagem: Inglês

10.1002/pssc.200461755

1862-6351

Ignacio Quintana, G. Ottaviani, R. Tonini, L. Felisari, Matteo Garavaglia, Laura Oggioni, Derrick Morin,

Advanced MEMS and NEMS Technologies

physica status solidi (c)Volume 2, Issue 10 p. 3706-3709 Original Paper An aluminum-germanium eutectic structure for silicon wafer bonding technology I. Perez-Quintana, I. Perez-Quintana Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, Italy Permanent address: Physics Faculty, University of Havana, San Lazaro y L, 10400 La Habana, CubaSearch for more papers by this authorG. Ottaviani, Corresponding Author G. Ottaviani [email protected] Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, ItalyPhone: + 390592055263, Fax: +390592055235Search for more papers by this authorR. Tonini, R. Tonini Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, ItalySearch for more papers by this authorL. Felisari, L. Felisari Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, ItalySearch for more papers by this authorM. Garavaglia, M. Garavaglia STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, ItalySearch for more papers by this authorL. Oggioni, L. Oggioni STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, ItalySearch for more papers by this authorD. Morin, D. Morin STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, ItalySearch for more papers by this author I. Perez-Quintana, I. Perez-Quintana Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, Italy Permanent address: Physics Faculty, University of Havana, San Lazaro y L, 10400 La Habana, CubaSearch for more papers by this authorG. Ottaviani, Corresponding Author G. Ottaviani [email protected] Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, ItalyPhone: + 390592055263, Fax: +390592055235Search for more papers by this authorR. Tonini, R. Tonini Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, ItalySearch for more papers by this authorL. Felisari, L. Felisari Physics Department and MASEM Laboratory at University of Modena, Via Campi 213/a, Modena, ItalySearch for more papers by this authorM. Garavaglia, M. Garavaglia STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, ItalySearch for more papers by this authorL. Oggioni, L. Oggioni STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, ItalySearch for more papers by this authorD. Morin, D. Morin STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Milano, ItalySearch for more papers by this author First published: 27 July 2005 https://doi.org/10.1002/pssc.200461755Citations: 7AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Abstract An aluminum-germanium eutectic bonding technology has been used to uniformly bond two silicon wafers for MEMS packaging at temperatures as low as 450 °C, well below the aluminum-silicon eutectic temperature (577 °C). A device silicon wafer has been put in contact with a cap wafer where an aluminum film covered by a germanium film has been thermally evaporated. The annealing has been performed in a vacuum furnace under uniaxial pressure variable from 1.8 up to 30 kbar. The samples have been analyzed with various analytical techniques. 4He+ MeV Rutherford Backscattering Spectrometry (RBS) has been used to measure the thicknesses of the deposited films and to follow the aluminum-germanium intermixing, Scanning Acoustic Microscope (SAM) to control the uniformity of the bonding, Scanning Electron Microscope (SEM) associated with electron induced X-ray fluorescence to analyze composition, morphology and elements distribution in the film between the two bonded wafers. The temperatures for the annealing were selected above and below the Ge-Al the eutectic temperature. At temperatures below the eutectic no-bonding has been obtained for any applied pressure. Above the eutectic bonding occurs. The formation of a liquid film is mandatory to obtain a reproducible and robust bonding. The pressure is necessary to improve the contacts between the two wafers; its role in the metallurgy of the bonding needs to be explored. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) Citing Literature Volume2, Issue10August 2005Pages 3706-3709 RelatedInformation