A CdSe quantum dot based resonant cavity light-emitting diode showing single line emission up to 90 K
2008; IOP Publishing; Volume: 20; Issue: 1 Linguagem: Inglês
10.1088/0957-4484/20/1/015401
ISSN1361-6528
AutoresA. Gust, C. Kruse, K. Otte, J. Kalden, Thomas Meeser, K. Sebald, J. Gutowski, D. Hommel,
Tópico(s)Quantum Dots Synthesis And Properties
ResumoA II–VI wide-bandgap resonant cavity light-emitting diode is presented. The active region consists of CdSe quantum dots embedded in ZnSSe/MgS barriers, resulting in improved quantum efficiency at elevated temperatures. The resonant cavity is formed by a 14-period bottom distributed Bragg reflector and the semiconductor to air interface on top of the structure. Temperature dependent micro-electroluminescence measurements reveal emission of a single quantum dot up to 90 K. The turn-on voltages are 6 V at 4 K and 4 V at room temperature. These results are promising for the realization of green surface-emitting devices in general, and especially for an electrically driven prospective single photon source operating at room temperature.
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