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Characterization of low-dielectric constant SiOCN films synthesized by low pressure chemical vapour deposition

2001; Springer Science+Business Media; Volume: 11; Issue: PR3 Linguagem: Inglês

10.1051/jp4

1764-7177

L. Zambov, B. Ivanov, Cyril Popov, Georgi T. Georgiev, I. Stoyanov, Dimitar Dimitrov,

Metal and Thin Film Mechanics

Films composed of Si, C, O and N have been deposited by low pressure chemical vapour deposition (LPCVD) from different chemical systems: pyrolysis of C 3 N 3 Cl 2 N(SiMe 3 ) 2 and interaction between SiCl 4 C 2 Cl 4 , NH 3 and H 2 O vapour. The composition, chemical bonding and structure of the films were investigated by a variety of analytical techniques. The physicochemical and electrical properties of the layers were also studied and it was found that films exhibit low static dielectric constants in the ranges of 2.8 - 3.5 and 1.7 - 2.5 for the two chemical systems, respectively. These low-k values combined with the high density, good adhesion and chemical inertness of the films, make them very attractive for future device technology application.