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Concentration quenching of Eu-related luminescence in Eu-doped GaN

2004; American Institute of Physics; Volume: 85; Issue: 2 Linguagem: Inglês

10.1063/1.1771806

1520-8842

Hyungjin Bang, Shin-ichi Morishima, Junji Sawahata, Jongwon Seo, Mikio Takiguchi, M. Tsunemi, Katsuhiro Akimoto, Masaharu Nomura,

ZnO doping and properties

The dependence of Europium (Eu)-related luminescence intensity on the Eu concentration in Eu-doped GaN was studied. This luminescence is observed at 622nm and originates from the intra-4f transition of the Eu3+ ion. The intensity of the luminescence increased with increasing Eu concentration, up to about 2at.%, and then abruptly decreased. It was found that polycrystalline growth began to be induced at Eu concentrations of more than 2at.%. In addition, clear evidence for the formation of EuN compounds was obtained by x-ray diffraction and extended x-ray absorption fine structure analysis. The cause of the concentration quenching is likely to be related to the polycrystalline growth as well as EuN formation.