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Characterization of lattice damage in ion implanted silicon by multiple crystal x-ray diffraction

1987; Elsevier BV; Volume: 19-20; Linguagem: Inglês

10.1016/s0168-583x(87)80087-3

1872-9584

M. Servidori,

Semiconductor materials and interfaces

Multiple crystal X-ray diffraction is used to characterize the crystal damage induced by ion implantation and its evolution with postannealing treatments. This technique of structural investigation, which represents an unconventional method in problems of radiation damage, offers the advantage of a great sensitivity to lattice distortion. However, information on the nature of damage remains somewhat complicated, as the outcome of the technique is in terms of lattice strain and static atomic disorder. Whenever possible, multicrystal diffraction should therefore be supported by other investigation techniques, even if it is very often the only one able to detect the presence of crystallographic imperfections. Various subjects, typical in ion implantation, will be mentioned and the results will be compared with the ones obtained by other techniques: Monte Carlo simulations of damage production, transmission electron microscopy and electrical measurements.