Silicon on insulator technologies and devices: from present to future
2001; Elsevier BV; Volume: 45; Issue: 8 Linguagem: Inglês
10.1016/s0038-1101(00)00271-9
ISSN1879-2405
Autores Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
ResumoThe context of silicon on insulator (SOI) technologies is reviewed in terms of wafer fabrication, configuration/performance of SOI devices, and typical operation mechanisms in partially and fully depleted SOI MOSFETs. The future of SOI is tentatively explored, by addressing the further scalability of SOI transistors as well as the innovating architectures (double-gate, ground-plane, and extremely thin MOSFETs) proposed for the ultimate generations of SOI transistors.
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