Acceptor-related luminescence at 3.314eV in zinc oxide confined to crystallographic line defects
2007; Elsevier BV; Volume: 401-402; Linguagem: Inglês
10.1016/j.physb.2007.08.188
ISSN1873-2135
AutoresM. Schirra, R. Schneider, Anton Reiser, G. M. Prinz, Martin Feneberg, Johannes Biskupek, Ute Kaiser, Carl E. Krill, R. Sauer, K. Thonke,
Tópico(s)Copper-based nanomaterials and applications
ResumoThe 3.314 eV emission band characteristically appearing in bulk, epitaxial, and nano-structured ZnO samples is studied by photoluminescence (PL) and spatially resolved cathodoluminescence (CL) at cryogenic temperatures along with SEM and TEM. We show that the band originates from a free electron transition to a neutral acceptor (e, A0) with ionization energy of 130±2 meV. Our TEM data reveal that the acceptor is a complex defect related with basal plane stacking faults. We also conclude that it is unrelated with elemental impurities such as group V elements used for nominal ZnO doping to achieve p-type conductivity.
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