Intersubband dynamics in modulation doped quantum wells
1989; Elsevier BV; Volume: 32; Issue: 12 Linguagem: Inglês
10.1016/0038-1101(89)90283-9
ISSN1879-2405
AutoresJ. L. Educato, Daniel W. Bailey, A. R. Sugg, K. Hess, Jean‐Pierre Leburton,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoA theoretical investigation of the dynamics of intersubband transitions in modulation doped multiple narrow GaAs / AlxGa1−xAs quantum well structures by emission of GaAs (well) and AlxGa1−xAs (barrier) slab and interface mode polar optical phonons is presented. Photo-excited carrier behavior is interpreted via Monte Carlo simulations which predict long time constants for electron relaxation.
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