Phase-shifting mask and top imaging resist for sub-half micron deep-UV lithography
1992; Elsevier BV; Volume: 17; Issue: 1-4 Linguagem: Inglês
10.1016/0167-9317(92)90016-k
ISSN1873-5568
AutoresO. Joubert, B. Dal’zotto, Bruno Picard, Alexander Sahm, S. Tedesco,
Tópico(s)Nanofabrication and Lithography Techniques
ResumoCombination of both phase-shifting mask technology and single layer top-imaging resist will allow deep-UV lithography to meet respectively 256 Mbit requirements and beyond. Using phase-shifting mask in conjunction with PRIME process, 0.175 μm lines and spaces have been resolved with an ASM-L PAS 5000/70 deep-UV (248 nm, NA=0.42) stepper on 0.85 μm thick PLASMASK 200G.
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