Very high quantum efficiency in type-II InAs∕GaSb superlattice photodiode with cutoff of 12μm
2007; American Institute of Physics; Volume: 90; Issue: 23 Linguagem: Inglês
10.1063/1.2746943
ISSN1520-8842
AutoresBinh Minh Nguyen, Darin Hoffman, Yajun Wei, Pierre-Yves Delaunay, Andrew Hood, Manijeh Razeghi,
Tópico(s)Advanced Optical Sensing Technologies
ResumoThe authors report the dependence of the quantum efficiency on device thickness of type-II InAs∕GaSb superlattice photodetectors with a cutoff wavelength around 12μm. The quantum efficiency and responsivity show a clear delineation in comparison to the device thickness. An external single-pass quantum efficiency of 54% is obtained for a 12μm cutoff wavelength photodiodes with a π-region thickness of 6.0μm. The R0A value is kept stable for the range of structure thicknesses allowing for a specific detectivity (2.2×1011cmHz∕W).
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