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Fluence dependence of charge collection of irradiated pixel sensors

2005; Elsevier BV; Volume: 552; Issue: 1-2 Linguagem: Inglês

10.1016/j.nima.2005.06.037

1872-9576

T. Rohe, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, A. Dorokhov, C. Hörmann, D. Kim, M. Konecki, D. Kotliński, K. Prokofiev, C. Regenfus, D. A. Sanders, Seunghee Son, T. Speer, M. Swartz,

CCD and CMOS Imaging Sensors

The barrel region of the CMS pixel detector will be equipped with "n-in-n" type silicon sensors. They are processed on diffusion oxygenated float zone (DOFZ) material, use the moderated p-spray technique for inter pixel isolation and feature a bias grid. The latter leads to a small fraction of the pixel area to be less sensitive to particles. In order to quantify this inefficiency prototype pixel sensors irradiated to particle fluences between 4.7×1013 and 2.6×1015neq/cm2 have been bump bonded to un-irradiated readout chips and tested using high energy pions at the H2 beam line of the CERN SPS. The readout chip allows a non-zero suppressed analog readout and is therefore well suited to measure the charge collection properties of the sensors. In this paper we discuss the fluence dependence of the collected signal and the particle detection efficiency. Further the position dependence of the efficiency is investigated.