Annealing mechanism of radiation damage and dopants in pulsed laser light irradiated ion implanted layers
1979; Wiley; Volume: 51; Issue: 1 Linguagem: Inglês
10.1002/pssa.2210510154
ISSN1521-396X
AutoresWalter Heywang, E. F. Krimmel, Hartmut Runge,
Tópico(s)Semiconductor materials and devices
Resumophysica status solidi (a)Volume 51, Issue 1 p. K79-K82 Short Note Annealing mechanism of radiation damage and dopants in pulsed laser light irradiated ion implanted layers W. Heywang, W. Heywang Zentrale Forschung und Entwicklung der Siemens AG, München Search for more papers by this authorE. F. Krimmel, E. F. Krimmel Zentrale Forschung und Entwicklung der Siemens AG, München Search for more papers by this authorH. Runge, H. Runge Zentrale Forschung und Entwicklung der Siemens AG, München Search for more papers by this author W. Heywang, W. Heywang Zentrale Forschung und Entwicklung der Siemens AG, München Search for more papers by this authorE. F. Krimmel, E. F. Krimmel Zentrale Forschung und Entwicklung der Siemens AG, München Search for more papers by this authorH. Runge, H. Runge Zentrale Forschung und Entwicklung der Siemens AG, München Search for more papers by this author First published: 16 January 1979 https://doi.org/10.1002/pssa.2210510154Citations: 7 Otto-Hahn-Ring 6, D-8000 München 83, BRD. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Citing Literature Volume51, Issue116 January 1979Pages K79-K82 RelatedInformation
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