Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance
2013; American Institute of Physics; Volume: 102; Issue: 11 Linguagem: Inglês
10.1063/1.4796141
ISSN1520-8842
AutoresKoutarou Kawahara, Xuan Thang Trinh, Nguyên Tiên Són, Erik Janzén, Jun Suda, Tsunenobu Kimoto,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe Z1/2 center in n-type 4H-SiC epilayers—a dominant deep level limiting the carrier lifetime—has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z1/2 center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z1/2 defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (VC) determined by electron paramagnetic resonance, suggesting that the Z1/2 deep level originates from VC.
Referência(s)