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Amorphous In–Ga–Zn–O Thin Film Transistor Current-Scaling Pixel Electrode Circuit for Active-Matrix Organic Light-Emitting Displays

2009; Institute of Physics; Volume: 48; Issue: 3S2 Linguagem: Inglês

10.1143/jjap.48.03b025

1347-4065

Xiaomeng Chen, Katsumi Abe, Tze-Ching Fung, Hideya Kumomi, Jerzy Kanicki,

ZnO doping and properties

In this paper, we analyze application of amorphous In–Ga–Zn–O thin film transistors (a-InGaZnO TFTs) to current-scaling pixel electrode circuit that could be used for 3-in. quarter video graphics array (QVGA) full color active-matrix organic light-emitting displays (AM-OLEDs). Simulation results, based on a-InGaZnO TFT and OLED experimental data, show that both device sizes and operational voltages can be reduced when compare to the same circuit using hydrogenated amorphous silicon (a-Si:H) TFTs. Moreover, the a-InGaZnO TFT pixel circuit can compensate for the drive TFT threshold voltage variation (ΔVT) within acceptable operating error range.