Deposition of carbon films containing nitrogen by filtered pulsed cathodic arc discharge method
1998; Elsevier BV; Volume: 7; Issue: 8 Linguagem: Inglês
10.1016/s0925-9635(98)00174-5
ISSN1879-0062
AutoresAndrei Stanishevsky, Leonid Khriachtchev, И. П. Акула,
Tópico(s)Semiconductor materials and devices
ResumoNitrogenated carbon films with N/C ratio up to 0.65 have been prepared by a filtered pulsed cathodic arc discharge (PCAD) method at nitrogen pressure in the range 0.1–15 Pa. The influence of the process parameters and nitrogen pressure on the growth rate, chemical composition and quality of C:N films has been studied. The maximum N/C ratio was found at a gas pressure of 1–2 Pa. Raman study of films prepared at nitrogen pressure higher than 2 Pa showed a strong increase of the photoluminescence signal with a maximum at 2.2 eV.
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