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Analysis of high energy ion scattering for the Si(111)7 × 7 DAS model by computer simulation

1990; Elsevier BV; Volume: 231; Issue: 3 Linguagem: Inglês

10.1016/0039-6028(90)90198-h

1879-2758

Junichi Yanagisawa, Akio Yoshimori,

X-ray Spectroscopy and Fluorescence Analysis

Abstract We have calculated using a Monte Carlo simulation the high energy ion scattering intensities for the Si(111)7 × 7 DAS model including displacements of surface atoms as reported recently. Though we ignored the effects of enhancement and correlation in the vibrations of surface atoms, for several models of surface atom displacement in the DAS structure some of the results are in fairly good agreement with experiment. We conclude that the experimental results of high energy ion scattering for the Si(111)7 × 7 surface are explained by the DAS model including displacements of surface atoms from their bulk positions.