Direct Al cathode layer sputtering on LiF∕Alq3 using facing target sputtering with a mixture of Ar and Kr
2006; American Institute of Physics; Volume: 88; Issue: 8 Linguagem: Inglês
10.1063/1.2178483
ISSN1520-8842
AutoresHan‐Ki Kim, Sang‐Woo Kim, Kyu‐Sung Lee, K. H. Kim,
Tópico(s)Organic Electronics and Photovoltaics
ResumoUsing facing target sputtering (FTS) with a mixture of Ar and Kr, direct Al cathode sputtering on LiF∕Alq3 layers was accomplished without the need for a protective layer against plasma damage. Organic light emitting diodes (OLEDs) with a directly sputtered Al cathode in a mixture of Ar and Kr showed a much lower leakage current density (∼1×10−5mA∕cm2 at −6V) than those (∼1×10−1mA∕cm2 at −6V) of OLEDs with an Al cathode prepared by FTS or dc sputtering in a pure Ar ambient. This indicates that the bombardment of energetic particles is effectively restricted by mixing a heavy noble gas. Based on the current-voltage curve for the OLED, a possible mechanism is proposed to explain the effect of a heavy noble gas mixture on electrical properties of OLEDs for direct Al cathode sputtering by FTS.
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