Low temperature formation of multi-layered structures of ferromagnetic silicide Fe3Si and Ge
2008; Elsevier BV; Volume: 254; Issue: 19 Linguagem: Inglês
10.1016/j.apsusc.2008.02.139
ISSN1873-5584
AutoresKoji Ueda, Yuichiro Ando, Mamoru Kumano, Taizoh Sadoh, Yoshihito Maeda, Masanobu Miyao,
Tópico(s)Surface and Thin Film Phenomena
ResumoLow-temperature (<300 °C) molecular beam epitaxy of Fe3Si/Ge was investigated. By optimizing growth conditions, Fe3Si layers with a flat interface and good crystallinity were epitaxially grown on Ge(1 1 1) substrates. In addition, double heteroepitaxial growth of Fe3Si/Ge on high quality Fe3Si/Ge substrates was investigated. Reflective high-energy electron diffraction measurements suggested Fe3Si and Ge layers were epitaxially grown on Fe3Si/Ge substrates. However, transmission electron microscopy measurements indicated stacking faults formed in the intermediate Ge and top Fe3Si layers. Improved crystallinity of the intermediate Ge layer is essential to realize high quality [Fe3Si/Ge]2 multi-layered structures.
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