Introduction of In or Ga as second dopant to BaZr0.9Y0.1O3−δ to achieve better sinterability
2008; Elsevier BV; Volume: 179; Issue: 9-10 Linguagem: Inglês
10.1016/j.ssi.2008.02.047
ISSN1872-7689
AutoresNobuyuki Ito, Hidetoshi Matsumoto, Yuya Kawasaki, Shigeru Okada, Tatsumi Ishihara,
Tópico(s)Thermal Expansion and Ionic Conductivity
ResumoBaZr1 − xYxO3 − δ is a proton-conducting oxide that has both high ionic conductivity and good chemical stability, but disadvantageously has low sinterability. In this work, two co-dopant systems, BaZr0.9(Y1 − xMx)0.1O3 − δ (M = Ga, In), were studied with the aim of improving sinterability. In both systems, sinterability was markedly improved. Although the addition of Ga markedly decreased the conductivity of BaZr1 − xYxO3 − δ, the addition of In did not decrease the conductivity significantly. It was shown that BaZr0.9Y0.05In0.05O3 − δ is a practically useful material with a good combination of conductivity and sinterability.
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