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Auger and radiative recombination coefficients in 0.55-eV InGaAsSb

2004; American Institute of Physics; Volume: 97; Issue: 2 Linguagem: Inglês

10.1063/1.1828609

1520-8850

Ravi Kumar, J.M. Borrego, P.S. Dutta, R.J. Gutmann, Chi-Hsien Wang, G. Nichols,

Chalcogenide Semiconductor Thin Films

A radio-frequency photoreflectance technique, which senses changes in sample conductivity as carriers recombine following excitation by a laser pulse, has been used to measure the recombination parameters in 0.55-eV InGaAsSb lattice matched to GaSb. Doubly capped lifetime structures with variable active layer thicknesses are used to extract the surface recombination velocity, while an analysis of the samples with different doping concentrations is used to obtain Auger (C) and radiative (B) recombination parameters. Parameter extraction for the samples evaluated gives C=(1±0.4)×10−28cm6∕s and B=(3±1.5)×10−11cm3∕s for 0.55-eV InGaAsSb lattice matched to GaSb. The Auger and radiative recombination coefficients obtained from high-level injection decay times in low doping concentration samples show very good agreement with the values obtained from low-level injection conditions.