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Growth Behavior of Nonpolar ZnO on M-plane and R-plane Sapphire by Metalorganic Vapor Phase Epitaxy

2005; Institute of Physics; Volume: 44; Issue: 11R Linguagem: Inglês

10.1143/jjap.44.7919

1347-4065

Takumi Moriyama, Shizυo Fujita,

Ga2O3 and related materials

M -plane and A -plane ZnO films were grown on M -plane and R -plane sapphire substrates respectively. At high growth temperatures and/or VI/II ratios, ZnO grew along the direction perpendicular to the c -axis. On the other hand, at low growth temperatures and/or VI/II ratios, ZnO grew along the c -axis direction. A very smooth ZnO film was achieved on R -plane sapphire under a very low VI/II ratio condition. This was because the lateral growth was accelerated by a very strong tendency of growing along the c -axis. In contrast, on M -plane sapphire, C -plane ZnO nanorods tilted by 30° from the normal of the surface were formed under this growth condition.