Observation of real space transfer in GaAs-AlGaAs heterostructure grown by LPE
1987; Elsevier BV; Volume: 62; Issue: 9 Linguagem: Inglês
10.1016/0038-1098(87)90197-9
ISSN1879-2766
AutoresXiao-song Jiang, Lisheng Yu, Shumin Wang, H. D. Liu, Bei Zhang,
Tópico(s)Semiconductor materials and devices
ResumoNegative differential resistance (NDR) and oscillation was observed in GaAs-AlGaAs heterostructure grown by LPE. It was concluded that NDR resulted from real space transfer of hot electrons in the heterojunction.
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