Structured porous silicon sub-micrometer wells grown by colloidal lithography
2006; Institute of Physics; Volume: 76; Issue: 4 Linguagem: Inglês
10.1209/epl/i2006-10331-2
ISSN1286-4854
AutoresMiguel Manso‐Silván, María Arroyo‐Hernández, V. Torres‐Costa, Raúl J. Martín‐Palma, José Manuel Martínez Duart,
Tópico(s)Semiconductor materials and devices
ResumoPeriodic porous silicon sub-micrometer wells embedded into a silicon matrix have been grown by a combination of colloidal lithography, plasma processing and electrochemical etching. The process relies on the formation of a self-assembled monolayer of polystyrene microspheres, which are etched in an Ar/O2 plasma. A polymer resist is subsequently deposited by plasma polymerization. Finally, after colloidal particle removal, the surface is electrochemically etched in HF to form the porous silicon wells.
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