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Assessing the performance of two-dimensional dopant profiling techniques

2004; American Institute of Physics; Volume: 22; Issue: 1 Linguagem: Inglês

10.1116/1.1638775

1520-8567

Natasja Duhayon, Pierre Eyben, Marc Fouchier, Trudo Clarysse, Wilfried Vandervorst, David Álvarez, S. Schoemann, Mauro Ciappa, M. Stangoni, Wolf Fïchtner, Petr Formánek, M. Kittler, V. Raineri, Filippo Giannazzo, D. Goghero, Y. Rosenwaks, Rafi Shikler, Shimon Saraf, Sascha Sadewasser, Nicolas Barreau, Thilo Glatzel, Marcel A. Verheijen, S.A.M. Mentink, M. von Sprekelsen, T. Maltezopoulos, R. Wiesendanger, L. Hellemans,

Advancements in Photolithography Techniques

This article discusses the results obtained from an extensive comparison set up between nine different European laboratories using different two-dimensional (2D) dopant profiling techniques (SCM, SSRM, KPFM, SEM, and electron holography). This study was done within the framework of a European project (HERCULAS), which is focused on the improvement of 2D-profiling tools. Different structures (staircase calibration samples, bipolar transistor, junctions) were used. By comparing the results for the different techniques, more insight is achieved into their strong and weak points and progress is made for each of these techniques concerning sample preparation, dynamic range, junction delineation, modeling, and quantification. Similar results were achieved for similar techniques. However, when comparing the results achieved with different techniques differences are noted.