Deposition of aluminium nitride coatings using a cold wall CVD reactor
2000; Elsevier BV; Volume: 123; Issue: 2-3 Linguagem: Inglês
10.1016/s0257-8972(99)00510-1
ISSN1879-3347
AutoresB. Armas, Miguel de Icaza, F. Sibieude,
Tópico(s)Semiconductor materials and devices
ResumoAbstract Aluminium nitride was obtained in a cold wall reactor using AlCl 3 and NH 3 as precursors and N 2 as a carrier gas. AlCl 3 was synthesized in situ by means of an original method based on the SiCl 4 (g) reaction on Al(s). The substrate used is a cylinder of graphite coated with SiC and heated by high frequency induction. The deposition rate was studied as a function of temperature in the range 900–1500°C, the total pressure varying from 2 to 180 hPa. At low temperatures an Arrhenius type representation of the kinetics for several pressures indicated a thermally activated behaviour with an apparent activation energy of about 80 kJ mol −1 . At high deposition temperatures the deposition rate was almost constant, indicating that the growth is controlled by the diffusion process. The influence of gas composition and total AlCl 3 flow rate was also discussed. The different layers were characterized particularly by means of X-ray diffraction and scanning electron microscopy. The influence of temperature and total pressure on crystallization and morphology was studied.
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