Growth and characterization of ZnCdTe-ZnTe quantum wells on ZnO coated Si substrate by metalorganic chemical vapor deposition
2001; Elsevier BV; Volume: 233; Issue: 4 Linguagem: Inglês
10.1016/s0022-0248(01)01646-3
ISSN1873-5002
AutoresC. X. Shan, X.W. Fan, J.Y. Zhang, Z.Z. Zhang, Jialin Ma, Yuehui Lu, Yichun Liu, D.Z. Shen,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoZnCdTe-ZnTe quantum wells (QWs) have been grown on Si (1 0 0) substrates in a horizontal-type low-pressure metalorganic chemical vapor deposition (MOCVD) system. An oriented ZnO thin film with a smooth surface was employed to be the bufferlayer for the growth. Scanning electron microscopy (SEM) patterns showed that the ZnO bufferlayer improved the smoothness of the sample. The photoluminescence (PL) spectra of the QWs with and without ZnO layer were studied. The great enhancement of the emission efficiency of the one with ZnO layer indicated that the quality of the epilayer was improved.
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