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Undoped and rare‐earth doped GaN quantum dots on AlGaN

2006; Wiley; Volume: 243; Issue: 7 Linguagem: Inglês

10.1002/pssb.200565190

1521-3951

Yuji Hori, Thomas Andreev, F. Thomas, E. Bellet‐Amalric, Daniel Le Si Dang, Mitsuhiro Tanaka, Osamu Oda, B. Daudin,

Semiconductor materials and devices

We study the self organized growth of GaN quantum dots deposited by molecular beam epitaxy on AlxGa1–xN, with x varying between 1 and 0.21. As a result of the specific strain relaxation mechanism of AlxGa1–xN on AlN, it is found that dots can be formed for an Al content as low as about 30%. Monopolar devices have been realized by depositing Schottky contacts on n-type doped Al0.5Ga0.5N. Finally, electroluminescence of Eu-doped GaN quantum dots embedded in n-type Al0.5Ga0.5N has been demonstrated, emphasizing the potentialities of such an active layer for room temperature visible light emission. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)