Effect of annealing ambient on the removal of oxide precipitates in high-dose oxygen implanted silicon
1991; American Institute of Physics; Volume: 59; Issue: 23 Linguagem: Inglês
10.1063/1.105825
ISSN1520-8842
AutoresSuṗapan Seraphin, Stephen Krause, P. Roitman, David S. Simons, B. Cordts,
Tópico(s)Silicon and Solar Cell Technologies
ResumoThe effect of annealing ambient on the precipitate removal processes in high-dose oxygen implanted silicon [separation by implantation of oxygen (SIMOX)] has been studied with transmission electron microscopy, electron energy-loss spectroscopy, and secondary ion mass spectroscopy. The rate of removal of oxide precipitates from the top silicon layer in SIMOX is higher during annealing in argon than in nitrogen. The removal is reduced in nitrogen due to the formation of an oxynitride complex at the precipitate surfaces which inhibits oxygen diffusion across the interfaces. Similar effects have been observed for oxide precipitation during nitrogen ambient annealing in bulk silicon.
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