Optical waveguides using GaAs-AlGa1−As multiple quantum well
1985; Elsevier BV; Volume: 56; Issue: 4 Linguagem: Inglês
10.1016/0030-4018(85)90090-2
ISSN1873-0310
AutoresShigeaki Ohke, Tsutomu UMEDA, Y. Cho,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoFor the purpose of using the multiple quantum well structure as an optical waveguide of nonlinear-optical devices, GaAs-AlxGa1-xAs MQW structure is investigated theoretically. The composition ratios of the composing compound semiconductors can provide flexibility for the design of those devices. The numerically calculated result of the field distributions of the MQW waveguide structures showed that they can be approximated by replacing the MQW core section with a uniform material whose refractive index equals the root-mean-square value of the refractive indices of the MQW core section when the MQW structural (quantum wells and barriers) dimensions are less than ∼ 200 Å for the near-infrared region.
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