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Precise measurement of density and structure of undercooled molten silicon by using synchrotron radiation combined with electromagnetic levitation technique

2005; IOP Publishing; Volume: 16; Issue: 2 Linguagem: Inglês

10.1088/0957-0233/16/2/008

1361-6501

Kensuke Higuchi, Kosuke Kimura, Akitoshi Mizuno, Masahito Watanabe, Yoshiaki Katayama, K. Kuribayashi,

Silicon and Solar Cell Technologies

X-ray diffraction and density measurements have been simultaneously performed to investigate the atomic structure of molten silicon in a wide temperature range including the undercooling region by using the electromagnetic levitation technique. The density was obtained from the mass and the shape of a levitated sample by a non-contact method based on the image analysis technique. X-ray diffraction experiments were performed by using the synchrotron radiation at SPring8, Japan. From structural analysis of undercooled molten silicon, the first nearest neighbour coordination numbers and interatomic distances were about 5 and 2.48 Å with no dependence on temperature in the range of 1900–1550 K. We conclude as a result that the short-range order based on tetrahedral bonds of undercooled molten silicon does not change with the degree of undercooling but that medium-range order changes by the degree of undercooling.