Temperature dependence of photoluminescence spectra of the pentanary alloy semiconductor (Al x Ga1− x )1− z In z P y As1− y
1988; American Institute of Physics; Volume: 64; Issue: 6 Linguagem: Inglês
10.1063/1.341501
ISSN1520-8850
AutoresShūichi Emura, Hitoshi Sumida, Shun‐ichi Gonda, Seiji Mukai,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoPhotoluminescence spectra of the pentanary alloy semiconductor (AlxGa1−x)1−zInzPyAs1−y (x<0.33, y<0.18, z<0.09) are observed at various temperatures between 300 and 13 K. The spectrum at higher temperatures is of a single peak, in which the line shape is well reproduced by an expression of C(E−Eg)1/2 exp[−(E−Eg)/kBT], where E is the photon energy, Eg the band gap, kB Boltzmann constant, and T temperature. At lower temperatures, a band on the lower energy side grows up rapidly. The plot of integrated luminescence intensity of a high-energy peak as a function of reciprocal temperature shows a single exponential slope. The temperature dependence of the peak energy of the high-energy band is of a hyperbolic cotangent form. These experimental results suggest that the peak on the higher-energy side is attributed to a band-to-band transition.
Referência(s)