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Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique

1996; Institute of Physics; Volume: 35; Issue: 8B Linguagem: Inglês

10.1143/jjap.35.l1023

1347-4065

N. SONODA, Yong Sun, Tatsuro Miyasato,

Semiconductor materials and devices

Highly oriented β-SiC film is prepared on (100) Si substrate at 800°C by reactive hydrogen plasma sputtering of a ceramic SiC target. The highly oriented β-SiC film can be grown on (100) Si substrate without void formation at the SiC film/Si interface. Hydrogen plasma etching of the growing film plays an important role in the growth of the oriented β-SiC films. Voids at the SiC film/Si interface are formed at a temperature of about 800°C due to the reaction of SiC film with Si substrate. Also, a thin amorphous buffer layer of 5 nm thickness is formed at the SiC film/Si interface. The results of this study indicate that the buffer layer can be eliminated by a suitable surface treatment of Si substrate before film growth.