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A scanning-electron- or light-beam-induced current method for determination of grain boundary recombination velocity in polycrystalline semiconductors

1985; Institute of Electrical and Electronics Engineers; Volume: 32; Issue: 9 Linguagem: Inglês

10.1109/t-ed.1985.22193

1557-9646

C.A. Dimitriadis,

Semiconductor materials and interfaces

Analytical expression for the induced current profiles at grain boundaries in polycrystalline solar cells is derived for electron-or light-beam excitation. By fitting the experimental data to the theory it is possible to determine both the interface recombination velocity S GB and the minority-carrier diffusion length L . The applicability of the theory is demonstrated by evaluating experimental electron-beam-induced current profiles.