Laser-induced forward transfer of multi-layered structures for OTFT applications
2014; Elsevier BV; Volume: 336; Linguagem: Inglês
10.1016/j.apsusc.2014.06.155
ISSN1873-5584
AutoresCătălin Constantinescu, Abdou Karim Diallo, Ludovic Rapp, Pierre Crémillieu, R. Mazurczyk, Françoise Serein‐Spirau, J.-P. Lère-Porte, P. Delaporte, Anne‐Patricia Alloncle, Christine Videlot‐Ackermann,
Tópico(s)Analytical Chemistry and Sensors
ResumoWe report on the one-step laser printing of multi-layered organic-based field effect transistors, using thin films of bis(2-phenylethynyl) end-substituted terthiophene (diPhAc-3 T) as semiconductor, parylene-C (Py-C) as dielectric and silver (Ag) as gate electrode, respectively. The laser-induced forward transfer (LIFT) process was used to transfer pixels from donor to receiver substrates. The latter included pre-designed source and drain gold electrodes to form complete organic thin films transistors (OTFTs). Such laser-induced forward transfer used a single 50 ps duration pulse delivered by a Nd:YAG laser operating at 355 nm to print transistor pixel arrays under ambient temperature. The pixels (350 μm sized-squares, and 700 ± 40 nm in thickness), fabricated in the top gate configuration, were investigated for their current–voltage characteristics immediately after printing. Electrical characterization demonstrated that the laser printed transistor is fully functional with hole mobilities of 4 × 10−4 cm2/V s, a threshold voltage Vt near −10 V, Ion/Ioff ratio near to 104–105 and the sub-threshold slope (S) of 14–18 V/decade. The efficient cohesion between the three different layers composing the pixels offers an exceptionally high strength to laser printing, while maintaining the electrical properties.
Referência(s)