Full swing logic inverter with amorphous SiInZnO and GaInZnO thin film transistors
2012; American Institute of Physics; Volume: 101; Issue: 9 Linguagem: Inglês
10.1063/1.4747800
ISSN1520-8842
AutoresPulak Chandra Debnath, Sang Yeol Lee,
Tópico(s)Transition Metal Oxide Nanomaterials
ResumoA high-performance n-channel metal-oxide-semiconductor inverter implemented consisting of enhancement mode driving thin-film transistor with amorphous Ga-In-Zn-O (a-GIZO) and depletion mode load with amorphous Si-In-Zn-O (a-SIZO) is demonstrated. The threshold voltage of the post-annealed a-SIZO load thin film transistor (TFT) exhibits negative value while the threshold voltage of the GIZO driving TFT exhibits positive value. The proposed inverter composed of a-SIZO and a-GIZO TFT shows much improved switching characteristics with higher voltage gain.
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