Piezoresistance effect of silicon
1991; Elsevier BV; Volume: 28; Issue: 2 Linguagem: Inglês
10.1016/0924-4247(91)85017-i
ISSN1873-3069
Autores Tópico(s)Mechanical and Optical Resonators
ResumoThe principle of the piezoresistance effect (PR) of n- and p-Si is explained by the carrier-transfer mechanism and the effective mass change. The origin of the shear piezoresistance coefficient π44 in n-Si is also a stress-induced effective mass change. A graphical representation of the PR on crystallographic orientations and the effect of impurity concentration on the PR are given for n- and p-Si. The non-linearity of the PR is also mentioned.
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