Effect of high energy ion implantation on sapphire
1991; Elsevier BV; Volume: 59-60; Linguagem: Inglês
10.1016/0168-583x(91)95787-e
ISSN1872-9584
AutoresT. Miyano, Teiichi Matsumae, Hajime Yokoo, Yasunori Andoh, Masato Kiuchi, Mamoru Satou,
Tópico(s)Advanced Surface Polishing Techniques
ResumoWe have studied the capability of controlling optical characteristics by forming a modified layer in a substrate using high energy ion implantation. Cu+ ions were irradiated into sapphire (0001) with acceleration energies of 0.75 ~ 1.5 MeV and fluences of 1 × 1015∼1 × 1018ions/cm2. Then, the ion-implanted sapphire was annealed. A new absorption peak appeared at 360 nm by ion implantation, and the transmittance became lower with increasing fluence. The decrease in the transmittance was recovered and the absorption peak shifted to 580 nm after annealing at 1000 °C. We have been able to confirm that the change of the optical characteristics was due to the change of electronic state of the implanted copper.
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