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The electron effective mass in heavily doped GaAs

1979; IOP Publishing; Volume: 12; Issue: 12 Linguagem: Inglês

10.1088/0022-3719/12/12/014

1747-3802

A. Raymond, Jean-Lοuis Robert, C. Bernard,

Surface and Thin Film Phenomena

A resolution to the order k6 of the three-level equation of Kane allows the authors to obtain a new expression for the conduction band energy and so new analytical expressions for the electron effective masses in the range of carrier concentration 1016-1019 cm-3. The calculated values of the conduction effective mass as a function of carrier density agree well, for the first time, with experimental values, which were obtained from Shubnikov-de Haas experiments by using a new expression for the oscillation amplitude. In this expression the authors take into account the effect of medium-range potential fluctuations induced by crystal inhomogeneities.