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Artigo Revisado por pares
BIBTEX RIS

High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devices

1982; Elsevier BV; Volume: 56; Issue: 2 Linguagem: Inglês

10.1016/0022-0248(82)90465-1

ISSN

1873-5002

Autores

S. Hiyamizu, T. Mimura,

Tópico(s)

Quantum and electron transport phenomena

Referência(s)
Ver no editor
Journal of Crystal Growth
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