A high-responsivity photodetector absent metal-germanium direct contact
2014; Optica Publishing Group; Volume: 22; Issue: 9 Linguagem: Inglês
10.1364/oe.22.011367
ISSN1094-4087
AutoresYi Zhang, Shuyu Yang, Yisu Yang, Michael N. Gould, Noam Ophir, Andy Eu-Jin Lim, Guo‐Qiang Lo, Peter Magill, Keren Bergman, Tom Baehr‐Jones, Michael Hochberg,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoWe report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at -4 V reverse bias and 1.44 A/W at -12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.
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