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The stability of Frenkel pairs and group V interstitials in electron-irradiated GaAs and GaP

1987; IOP Publishing; Volume: 2; Issue: 7 Linguagem: Inglês

10.1088/0268-1242/2/7/002

1361-6641

R. Murray, R.C. Newman, J. Woodhead,

Semiconductor materials and devices

BGa impurity atoms selectively trap mobile group V interstitials to form defects designated B(1) centres in both GaAs and GaP during 2 MeV electron irradiation at room temperature. The production of these centres has been measured in both n-type and p-type material by infrared absorption and compared with a model proposed by Pons and Bourgoin relating to radiation-enhanced diffusion of the interstitial atoms. The results imply, however, that the dissociation of Frenkel pairs produced on the group V sublattice as primary defects control the process. The Frenkel pairs are stable in n-type material but not in p-type or high-resistivity material.