Room-temperature minority-carrier injection-enhanced recovery of radiation-induced defects in p -InGaP and solar cells
2000; American Institute of Physics; Volume: 76; Issue: 18 Linguagem: Inglês
10.1063/1.126407
ISSN1520-8842
AutoresAurangzeb Khan, Masafumi Yamaguchi, J. C. Bourgoin, Nicola De Angelis, Tatsuya Takamoto,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoWe present here the direct observation of minority-carrier injection-enhanced annealing of radiation-induced defects in metalorganic chemical vapor deposition grown p-InGaP at room temperature, and the consequent recovery of radiation damage in InGaP n+-p junction solar cells. Deep level transient spectroscopy analysis shows that the main defect H2 (Ev+0.55 eV) in p-InGaP exhibits minority-carrier injection-enhanced annealing characterized by an activation energy (ΔE=0.51 eV) close to the activation energy for the recovery (ΔE=0.54 eV) of the defect responsible for diffusion length degradation in n+-p solar cells. The marked recovery of radiation damage in InGaP solar cells induced by minority-carrier injection is found to be correlated with the annihilation of the H2 defect.
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