Coherent Spin Transport through a 350 Micron Thick Silicon Wafer
2007; American Physical Society; Volume: 99; Issue: 17 Linguagem: Inglês
10.1103/physrevlett.99.177209
ISSN1092-0145
AutoresBiqin Huang, D. J. Monsma, Ian Appelbaum,
Tópico(s)Semiconductor materials and devices
ResumoWe use all-electrical methods to inject, transport, and detect spin-polarized electrons vertically through a 350-micron-thick undoped single-crystal silicon wafer. Spin precession measurements in a perpendicular magnetic field at different accelerating electric fields reveal high spin coherence with at least $13\ensuremath{\pi}$ precession angles. The magnetic-field spacing of precession extrema are used to determine the injector-to-detector electron transit time. These transit time values are associated with output magnetocurrent changes (from in-plane spin-valve measurements), which are proportional to final spin polarization. Fitting the results to a simple exponential spin-decay model yields a conduction electron spin lifetime (${T}_{1}$) lower bound in silicon of over 500 ns at 60 K.
Referência(s)