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A GaAs FET Model for Large-Signal Applications

1984; IEEE Microwave Theory and Techniques Society; Volume: 32; Issue: 3 Linguagem: Inglês

10.1109/tmtt.1984.1132665

1557-9670

Darrell L. Peterson, Anthony M. Pavio, Bumman Kim,

Semiconductor Lasers and Optical Devices

The use of GaAs FET's under large-signal conditions requires a knowledge of the nonlinear behavior of these devices. A computer program, based on a circuit model with nonlinear elements, has been developed which provides this information. Results from the computer model and examples of its use in microwave circuit design are given.