Laser doping of silicon role of the surface status in the incorporation mechanism
1989; Elsevier BV; Volume: 36; Issue: 1-4 Linguagem: Inglês
10.1016/0169-4332(89)90934-3
ISSN1873-5584
AutoresG. G. Bentini, M. Bianconi, L. Correrá, Roberta Nipoti, Davide Patti, A. Gasparotto,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoPulsed laser doping of silicon has been investigated in order to evaluate the role of the surface status on the dopant incorporation rate as well as the influence of the irradiation parameters on the process. A XeCl excimer laser was used to irradiate silicon samples at different dopant PCl3 vapour pressures, number of pulses per frame, fluence and surface preparation. The results indicate that the incorporation rate is heavily affected by the surface status and suggest that the adsorbed layer which forms on the surface is the most important source of dopant material.
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