Customized nanostructures MBE growth: from quantum dots to quantum rings
2003; Elsevier BV; Volume: 251; Issue: 1-4 Linguagem: Inglês
10.1016/s0022-0248(02)02512-5
ISSN1873-5002
Autores Tópico(s)Quantum Dots Synthesis And Properties
ResumoAbstract When self-assembled InAs/GaAs(0 0 1) quantum dots (QD) are overgrown by a thin (2 nm) GaAs cap under different growth conditions, morphological changes occur. The effects of growth conditions on the final structural properties are analyzed by atomic force microscopy. Under As 4 , thin cap deposition at ∼540°C produces elongated dash-like nanostructures, whereas at 500°C two humps are obtained from each QD. When As 2 is used and the thin cap is deposited at 500°C, quantum rings are obtained. Ensemble photoluminescence (PL) spectroscopy and polarization PL at 15 K show drastic changes on confinement properties. Shape control results in PL emission tuning from 1110 nm (dots) to 920 nm (rings).
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