Twenty five years of semiconductor-grade silicon
1981; Wiley; Volume: 64; Issue: 1 Linguagem: Inglês
10.1002/pssa.2210640102
ISSN1521-396X
AutoresEberhard Spenke, Walter Heywang,
Tópico(s)Silicon Carbide Semiconductor Technologies
Resumophysica status solidi (a)Volume 64, Issue 1 p. 11-44 Review Article Twenty five years of semiconductor-grade silicon E. Spenke, E. Spenke Zentrale Forschung und Entwicklung der Siemens AG, Pretzfeld Search for more papers by this authorW. Heywang, W. Heywang Zentrale Forschung und Entwicklung der Siemens AG, Munchen Search for more papers by this author E. Spenke, E. Spenke Zentrale Forschung und Entwicklung der Siemens AG, Pretzfeld Search for more papers by this authorW. Heywang, W. Heywang Zentrale Forschung und Entwicklung der Siemens AG, Munchen Search for more papers by this author First published: 16 March 1981 https://doi.org/10.1002/pssa.2210640102Citations: 19 Siemensstr. 1, D-8551 Pretzfeld (Ofr.), BRD. Otto-Hahn-Ring 6, D-8000 München 83, BRD. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat References 1 E. Spenke, Z. Werkstofftech. 10, 262 (1979). 2 G. L. Pearson and W. H. Brattain, Proc. IRE 43, 1794 (1955). 3 J. H. Scaff, Metallurg. Trans. 1, 561 (1970). 4 G. K. Teal, IEEE Trans. Electron Devices 23, 621 (1976). 5 C. J. Frosch and L. Derrick, J. Electrochem. Soc. 104, 547 (1957). 6 J. Kilby, IEEE Trans. Electron Devices 23, 648 (1976). 7 J. A. Hoerni, IRE Electron Devices Meeting, Washington (DC) 1960. 8 A. Herlet and H. Hoffmann, Halbleiterprobleme II, Ed. W. Schottky, Vieweg, Braunschweig 1955 (pp. 259 to 280). 9 V. W. Gerlach, Z. angew. Physik 19, 396 (1965); P. Voss, IEEE Trans. Electron Devices 20, 299 (1973). 10 H. C. Torrey and C. A. Whitmer, Crystal Rectifiers, McGraw-Hill Publ. Co., New York/London 1948. 11 J. Königsberger, Jahrbuch Radioaktivitμt und Elektrizitμt 11, 84 (1914). 12 J. Königsberger, Hdb. Elektrizitμt, Ed. Graetz, Vol. 3, Barth Verlag, Leipzig 1923 (p. 661). 13 B. Gudden, Sitzungsber. phys. med. Soz. Erl. 62, 289 (1930); Phys. Z. 32, 825 (1931). 14 G. W. Pickard, US Patent 836 531, Aug. 30, 1906, Serial No. 332 697. 15 G. C. Southworth and A. P. King, Proc. IRE 27, 95 (1939). 16 K. Seiler, in: Naturforschung und Medizin in Deutschland 1939–1940, Vol. 15, Part 1, Ed. G. Goijbau and J. Zenneck, Dietrichsche Verlagsbuchhandlung, Wiesbaden 1948 (pp. 272 to 292). 17 K. Seiler, Naturforschung und Medizin in Deutschland 1939–1940 (p. 279). 18 K. Seiler, Z. Naturf. 5a, 393 (1950). 19 D. W. Lyon, C. M. Olson, and E. D. Lewis, J. Electrochem. Soc. 96, 359 (1949). 20 J. Stuke, Dissertation, Göttingen 1947. 21 W. Ringer and H. Welker, Z. Naturf. 3a, 20 (1948). 22 R. S. Ohl, US Patent, Serial No. 381, 273, filed March 1, 1941. 23 J. H. Scaff, H. C. Theuerer, and E. Scwhmacher, Trans. AIME 186, 383 (1949). 24 K. Lark-Horovitz and V. A. Johnson, Phys. Rev. 69, A258 (1946). 25 G. L. Pearson and J. Bardeen, Phys. Rev. 76, 865 (1949); Phys. Rev. 77, 303 (1950). 26 W. H. Brattain and J. Bardeen, Phys. Rev. 79, 230 (1948). 27 W. Shockley, Bell Syst. tech. J. 28, 453 (1949). 28 W. G. Pfann, J. Metals; Trans. AIME 4, 747 (1952). 29 P. H. Keck and M. J. E. Golay, Phys. Rev. 89, 1297 (1953). 30 H. C. Theuerer, US Patent 3, 060, 123, filed December 17, 1952 issued October 23, 1962. 31 K. Siebertz and H. Henker, Internal Invention-Announcement (Erfindungsmeldung) to Siemens & Halske AG, 30. 10. 1952. 32 R. Emeis, Z. Naturf. 9a, 67 (1954). 33 P. H. Keck, M. Green, and M. L. Polk, J. appl. Phys. 24, 1479 (1953). 34 W. Heywanq and G. Zieqler, Z. Naturf. 9a, 561 (1954). 35 W. Heywanq, Z. Naturf. 11a, 238 (1956). 36 R. E. Green Jr., J. appl. Phys. 36, 1297 (1969). 37 A. Mμhlbauer, Internat. Z. Elektrowμrme 25, 461 (1967). 38 W. Keller and A. Mμhlbauer, Floating Zone Silicon, Marcel Dekker, New York 1981, to be published. 39 R. N. Hall, J. phys. Chem. 67, 836 (1953). 40 S. Mμller, Z. Naturf. 9b 504 (1954); Dissertation, Stuttgart 1956. 41 DRP 304 857, 28. 5. 1916, example 3 (Julius Pintsch AG). 42 R. Hölbinq, Z. angew. Chem. 40, 655 (1927). 43 G. K. Teal and K. Storks, IEEE Trans. Electron Devices 23, 621 (1976). 44 F. Bischoff, DBP 1 134 459, filed May 18, 1954, patented Aug. 9, 1962. 45 F. Bischoff, US Patent 3 146 123, filed Feb. 8, 1961, patented Aug. 25, 1964. 46 R. C. Sangster, E. F. Maverick, and M. L. Croutch, J. Electrochem. Soc. 104, 317 (1957). 47 E. Sirtl, in: Festkörperprobleme 6, 1 (1967). 48 H. C. Theuerer, J. Electrochem. Soc. 108, 649 (1961). 49 W. J. Corriqan, Metallurgy of Semiconductor Materials, Ed. J. B. Scjzroeder, Wiley, New York 1962. 50 R. Nuttal, J. Electrochem. Soc. 111, 1199 (1964). 51 Y. Matukura, K. Suzuki, and Y. Mitra, J. Electrochem. Soc. 111, 491 (1964). 52 S. Nakanuma, J. Electrochem. Soc. 111, 1199 (1964). 53 H. C. Theuerer, J. J. Kleimack, H. H. Löar, and H. Christensen, Proc. IRE 48, 1642 (1960). 54 G. Ziegler, Interner Siemens Laborbericht, Karlsruhe, 16. 6. 1955, WHL 61/Zie/Hr. 55 R. Eweis and H. Henker, DBP 975 158, Filed December 3L, 1953, issued Aug. 24, 1961. 56 E. Spenke, Siemens 2. 32, 110 (1958). 57 H. Schweickert, K. Reuschel, and H. Gutsche, US Patent 3011877 and 3099 534, filed June 11, 1957, patented Dec. 5, 1961 and July 30, 1963, respectively. 58 H. Gutsche, US Patent 3042494, filed May 23, 1958, patented July 3, 1962. 59 H. Sandmann and U. Rucha, US Patent 3286685, filed Jan. 25, 1962, patented NOV. 22, 1966. 60 Th. Rummel, H. F. Quast, and J. Haus, DBP 1209113, filed Dec. 23, 1958, patented, July 28, 1966. 61 K. Reuschel, Siemen. Z. 41, 669 (1967). 62 W. Keller and H. Stut, Z. Feinwerktechnik 76, 207 (1971). 63 W. Dietze, DBP 2125085, ann. May 19, 1971, patented Feb. 22, 1979. 64 Th. Rummel, W. Keller, and H. F. Quast, DBP 1153908; US Patent 2913561. 65 G. K. Teal and J. B. Little, Phys. Rev. 78, 537 (1960). 66 J. Czochralski, Z. phys. Chem. 92, 219 (1917). 67 G. K. Teal, IEEE Trans. Electron Devices 23, 621 (1976). 68 G. K. Teal and E. Buehler, Phys. Rev. 87, 190 (1962). 69 H. Kleinknecht, Naturwissenschaften 39, 400 (1952). 70 H. Kleinknecht and K. Seiler, Z. Phys. 139, 599 (1954). 71 K. B. McAfee and G. L. Pearson, Phys. Rev. 87, 190 (1952). 72 G. L. Pearson and P. W. Foy, Phys. Rev. 87, 190 (1952). 73 G. L. Pearson and B. Sawyer, Proc. IRE 40, 1348 (1952). 74 E. Conwell and V. F. Weisskopf, Phys. Rev. 69, 258 (1946). 75 J. R. Haynes and W. Shockley, Phys. Rev. 81, 835 (1951). 76 J. R. Haynes and W. C. Westphal, Phys. Rev. 86, 680 (1952). 77 P. Debye and E. Conwell, Phys. Rev. 93, 693 (1954). 78 M. Prince, Phys. Rev. 93, 1204 (1954). 79 P. P. Debye and T. Kohane, Phys. Rev. 94, 724 (1954). 80 F. J. Morin and J. P. Maita, Phys. Rev. 96, 28 (1954). 81 G. L. Ludwig and R. L. Watters, Phys. Rev. 101, 1699 (1956). 82 W. Heywang, M. Zerbst, and F. Bischoff, Naturwissenschaften 41, 301. (1954). 83 M. Zerbst and W. Heywang, Z. Naturf. 11a, 608 (1956). 84 A. Hoffmann, K. Reuschel, and H. Rupprecht, J. Phys. Chem. Solids 11, 284 (1959). 85 H. Benda, Solid State Electronics 8, 189 (1965). 86 A. Herlet, Z. angew. Phys. 9, 155 (1957). 87 R. N. Hall, Proc. IRE 40, 1512 (1952). 88 A. Herlet and E. Spenke, Z. angew. Phys. 7, 99, Z. angew. Phys. 7, 149, 195 (1955). 89 E. Spenke, Report at the Garmisch Conf., Oct. 1956; Halbleiter und Phosphore, Ed. M. Schön and H. Welker, Vieweg u. Sohn, Braunschweig 1958 (pp. 630 to 640). 90 G. Bemski, Proc. IRE 46, 990 (1958), and references therein. 91 W. Heywang and M. Zerbst, Z. Naturf. 11a, 256 (1956). 92 W. Heywang and M. Zerbst, Nachr.-techn. Fachber. NTZ 5, 27 (1956). 93 W. Heywang and M. Zerbst, Siemen. Z. 31, 85 (1957). 94 W. Keller, Z. angew. Phys. 11, 351 (1959). 95 H. Benda, Z. Naturf. 13a, 354 (1958). 96 H. Benda, F. Dannhμuser, and E. Spenke, Siemens Forsch. u. Entwickl. Ber. 1, 255 (1972). 97 K. Graff and H. Pieper, J. Electroni. Mater. 4, 281 (1975). 98 G. Schwab, in: Semiconductor Silicon 1977, Ed. H. H. Hulf and E. Sertl, The Electrochem. Soc., Inc., Princeton (N.J. )1977 (pp. 481 to 490) 99 J. D. Kamm, Semiconductor Silicon 1977 (pp. 491 to 501). 100 A. Rose, Phys. Rev. 97, 322 (1955). 101 J. R. Haynes and J. Hornbeck, Phys. Rev. 97, 311 (1955). 102 J. Hornbeck and J. R. Haynes, Phys. Rev. 100, 606 (1955). 103 M. Zerbst and W. Heywang, see [89] (pp. 392 to 398). 104 G. Ziegler and M. Zerbst, Z. Naturf. 14a, 93 (1959). 105 W. Heywang and M. Zerbst, Z. Naturf. 14a, 377 (1959). 106 M. Zerbst and W. Heywang, Z. Naturf. 14a, 381 (1959). 107 W. Heywang and M. Zerbst, Z. Naturf. 14a, 641 (1959). 108 M. Zerbst and W. Heywang, Z. Naturf. 14a, 645 (1959). 109 M. Zerbst, G. Winstel, and W. Heywang, Z. Naturf. 14a, 958 (1959). 110 J. R. Haynes and J. Hornbeck, Phys. Rev. 90, 152 (1953). 111 W. M. Bullies and F. G. Vieweg-Gutberlet, see [132] (pp. 360 to 501). 112 T. Nozaki, Y. Yatsurugi, and Y. Endo, J. radioanal. Chem. 32, 43 (1976). and references therein. Y. Endo, Y. Yatsurugi, Y. Terai, and T. Nozaki, J. Electrochem. Soc. 126, 1422 (1979). 113 Mrs. Honrath, M. Zerbst, and G. Ziegler, Interner Siemens Laborbericht, Karlsruhe, 17. 3. 1958, WHL Nr. 268. 114 G. Ziegler and Mrs. Honrath, Interner Siemens Laborbericht, Karlsruhe. 3. 6. 1958, WHL Nr. 277. 115 G. Ziegler, Z. Metallk. 48, 491 (1958). 116 A. Hoffmann, in: Halbleiterprobleme VT, Ed. W. Schottky, Vieweg, Braunschweig 1961, (pp. 152 to 185). 117 N. Schink, Interner Siemens Bericht, Pretzfeld, 13. 4. 1960, ZW/LH. Nr. 227. 118 E. Spenke, in: Semiconductor Silicon 1969, Ed. R. H. Haberecht and E. L. Kern, The Electrochem. Soc., Inc., Princeton (N.J. )1969 (pp. 152 to 185). 119 A. Hoffmann, W. Keller, K. Reuschel, and Th. Rummel, DBP 1153540, ann. Sept 20, 1958, patented March 12, 1964; US Patent 2970111, filed Sept. 21, 1959, patented Jak 31, 1968. 120 K. Lark-Horovitz, Proc. Conf. Semiconducting Materials, Univ. Reading, Butterworth, London 1951 (pp. 47 to 69). 121 M. Tanenbaum and A. D. Mills, J. Electrochem. Soc. 108, 171 (1961). 122 C. N. Klahr and M. S. Cohen, Nucleonics (New York) 22, 62 (1964). 123 C. Rosenblum, W. C. Benzinq, and R. G. Denkewalter, DBP 1214789, filed May 9, 1962 issued April 6, 1967. 124 M. Schnöller, IEEE Trans. Electron Devices 21, 313 (1974). 125 R. N. Hall, Phys. Rev. 87, 387 (1952). 126 W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952). 127 J. Martin and E. Haas, Z. anal. Chem. 259, 97 (1972). 128 M. Schnöller, Z. anal. Chem. 259, 101 (1972). 129 J. Martin, M. Schnöller, and E. Haas, Z. anal. Chem. 259, 105 (1972). 130 R. R. Haberecht and E. L. Kern (Ed.), Semiconductor Silicon 1969, The Electrochem. Soc., Inc., Princeton (N.J. )1969. 131 H. H. Huff and R. R. Burgess (Ed.), Semiconductor Silicon 1973, The Electrochem. Soc., Inc., Princeton (N.J. )1973. 132 H. H. Huff and E. Sirtl (Ed.), Semiconductor Silicon 1977, The Electrochem. Soc., Inc., Princeton (N.J. )1977. 133 K. Graff, J. Hilqarth, and H. Neubrand, see [132] (pp. 575 to 584). 134 D. Helmreich and E. Sirtl, see [132] (pp. 626 to 636). 135 M. J. Hill and P. M. Van Iseqhem, see [132] (pp. 715 to 725). 136 H. Föll, U. Gösele, and B. O. Kolbesen, see [132] (pp. 565 to 574). 137 A. Seeger and M. L. Swanson, in: Lattice Defects in Semiconductors, Ed. R. R. Hasiguti, Univ. of Tokyo Press, Tokyo, and Pennsylvania State Univ. Press, 1968 (p. 93). 138 A. Seeger and K. P. Chik, phys. stat. sol. 29, 455 (1968). 139 K. P. Chik, Radiat. Eff. 4, 33 (1970). 140 A. Seeger, Radiat. Eff. 9, 15 (1971). 141 A. Seeger and W. Frank, Proc. Internat. Conf. Radiation Damage and Defects in Semiconductors, Reading 1972, Inst. Phys. Conf. Series No. 16, p. 262; Inst. Phys., London 1973. 142 W. Frank, Proc. Internat. Conf. Lattice Defects in Semiconductors, Freiburg 1974, Inst. Phys. Conf. Series No.23, p. 23; Inst. Phys., London 1975. 143 L. Prandtl, Z. angew. Math. Mech. 8, 85 (1928). 144 U. Dehlinger, Ann. Phys. (Leipzig) (5) 2, 749 (1929). 145 M. Polanyi, Z. Phys. 89, 660 (1934). 146 E. Orowan, Z. Phys. 89, 605 (1934). 147 G. Taylor, Proc. Roy. Soc. 145, 362, 388 (1934). 148 W. C. Dash, J. appl. Phys. 27, 1193 (1956). 149 G. H. Schwuttke, K. Brack, and E. W. Hearn, Microelectronic and Reliability 10, 467 (1971). 150 H. Strack, K. R. Mayer, and B. O. Kolbesen, Solid State Electronics 22, 135 (1979). 151 B. O. Kolbesen and H. Strunk, Proc. Fifth Internat. Conf. High Voltage Electron Microscopy, Kyoto 1977, Electron Microscopy Soc. Japan, Tokyo 1978 (pp. 637 to 640). 152 D. Kranzer, R. Lemme, B. O. Kolbesen, K. R. Mayer, and H. Strunk, Revu. phys. appl. 13, 803 (1978). 153 W. C. Dash, J. appl. Phys. 29, 736 (1958); J. appl. Phys. 30, 459 (1959); J. appl. Phys. 31, 736 (1960). 154 G. Ziegler, Z. Naturf. 168, 219 (1961). 155 W. Keller and G. Ziegler, DBP 1128413, filed Nov. 25, 1960, patented Nov. 22, 1962. 156 T. Y. Tan, E. E. Gardner, and W. K. Tice, Appl. Phys. Letters 30, 175 (1977). 157 K. H. Yanq, H. E. Kappert, and G. H. Schwuttke, phys. stat. sol. (a) 50, 221 (1978). 158 P. R. Camp, J. appl. Phys. 25, 459 (1954). 159 M. Tanenbaum, L. B. Valdes, E. Buehler, and N. B. Hannay, J. appl. Phys. 26, 686 (1955). 160 W. P. Allred and R. T. Bate, J. Electrochem. Soc. 108, 258 (1961). 161 A. Mμhlbauer, R. Kappelmeyer, and F. Keiner, Z. Naturf. 20a, 1089 (1965). 162 K. M. Kim, A. F. Witt, and H. C. Catos, J. Electrochem. Soc. 119, 1218 (1972). 163 H. Benda: Bericht der Siemens AG, Grundlagenentwicklung Halbleiter an BMFT Bonn, 7.1. 1976 (DK: 546.28.05: 621.382.2/3). 164 J. Burtscher, J. Krausse, and P. Voss, see [131] (pp. 581 to 589). 165 A. Mμhlbauer, F. Sedlak, and P. Voss, J. Electrochem. Soc. 122, 1113 (1975). 166 T. S. Plaskett, Trans. MS AIME 233, 809 (1965). 167 A. J. R. De Kock, Philips Res. Rep. Suppl. 1, 1 (1973). 168 A. F. Booenschμtz, μtzpraxis fμr Halbleiter, Carl Hanser Verlag, Mμnchen 1967. 169 H. Föll, U. Gösele, and B. O. Kolbesen, J. Crystal Growth 40, p. 90 (1977). 170 H. Föll and B. O. Kolbesen, Jahrbuch Akad. Wiss. Göttingen, 1976 (pp. 27 to 45). 171 Y. Suqita, Japan. J. appl. Phys. 4, 962 (1965). 172 M. J. Hill, P. M. Van Iseqhem, R. Sittig, and G. Popp, see [142] (p. 522). 173 W. Keller and A. Mμhlbauer, see [142] (pp. 538 to 543). 174 W. M. Bullis and F. G. Vieweq-Gutberlet, see [132] (pp. 360 to 366). 175 H. Schweickert, H. Gutsche, and R. Emeis, DBP 1177 119, ann. Nov. 2, 1955, patented May 29, 1965; US Patent 3030 189, filed May 19, 1958, patented april 17, 1962. 176 D. E. Carlson and C. R. Wronski, Appl. Phys. Letters 28, 671 (1976). 177 D. E. Carlson, IEEE Trans. Electron Devices 24, 449 (1977). 178 C. R. Wronski, D. E. Carlson, and R. E. Daniel, Appl. Phys. Letters 29, 602 (1976). 179 For survey see, e.g.: W. Schmidt: Proc. 13th Internat. Conf. Physics of Semiconductors, May 20, Rome 1976, (p. 898), Ed. F. G. Fumi, Tipografia Marves, Rome 1976. 180 J. C. Phillips, Proc. 13th Internat. Conf. Physics of Semiconductors, May 20, Rome 1976 (p. 13). 181 M. Schlμter, Proc. 13th Internat. Conf. Physics of Semiconductors, May 20, Rome 1976 (p. 646). 182 J. L. Moll, M. Tanenbaum, J. M. Golday, and N. Holonyak, Proc. IRE 44, 1174 (1956). 183 H. Föll and B. O. Kolbesen, Appl. Phys. 8, 319 (1975). 184 M. L. Cohen and T. K. Bergstresser, Phys. Rev. 141, 789 (1966). 185 W. E. Spear, Adv. Phys. 26, 811 (1977). 186 D. E. Carlson, J. I. Pankove, C. R. Wronski, and P. J. Zanzucchi, Thin Solid Films 45, 43 (1977). 187 W. Heywanq and H. W. Pötzl, Halbleiterelektronik. Vol. 3, Bμnderstruktur und Stromtransport, Springer, Berlin 1976 (p. 39). 188 G. E. Moore, IEEE Spectrum 16, 30 (1979). Citing Literature Volume64, Issue116 March 1981Pages 11-44 ReferencesRelatedInformation
Referência(s)