Sample size effect in photoelectrochemical etching of n -GaAs
2000; American Institute of Physics; Volume: 77; Issue: 9 Linguagem: Inglês
10.1063/1.1289908
ISSN1520-8842
AutoresQing Ma, N. Moldovan, Derrick C. Mancini, R. A. Rosenberg,
Tópico(s)Electronic and Structural Properties of Oxides
ResumoA sample size effect on the etching rate in the photoelectrochemical etching of n-GaAs is demonstrated using synchrotron radiation x rays as the light source. It is shown that the etching rate increases significantly with the ratio of sample size to x-ray illuminated area. The rate-limiting effect on the charge transfer across the semiconductor–electrolyte junction is found to account for the phenomenon. It is also found that the etching rate relates to the nonilluminated area with a rather simple function.
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