Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction
2012; American Institute of Physics; Volume: 101; Issue: 12 Linguagem: Inglês
10.1063/1.4753816
ISSN1520-8842
AutoresShun Kanai, Michihiko Yamanouchi, Shoji Ikeda, Y. Nakatani, F. Matsukura, Hideo Ohno,
Tópico(s)Physics of Superconductivity and Magnetism
ResumoThe electric field-induced ∼180° magnetization reversal is realized for a sputtered CoFeB/MgO-based magnetic tunnel junction with perpendicular magnetic easy axis in a static external magnetic field. Application of bias voltage with nanoseconds duration results in a temporal change of magnetic easy axis in the free layer CoFeB to in-plane, which induces precessional motion of magnetization in the free layer. The magnetization reversal takes place when the bias voltage pulse duration is adjusted to a half period of the precession. We show that the back and forth magnetization reversal can be observed by using successive application of half-period voltage pulses.
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