Photoluminescence in Ho-doped AgGaS2 single crystals
2000; Elsevier BV; Volume: 87-89; Linguagem: Inglês
10.1016/s0022-2313(99)00537-2
ISSN1872-7883
AutoresTomoaki Terasako, Kana Hashimoto, Y Nomoto, Sho Shirakata, Shigehiro Isomura, Eiki Niwa, K. Masumoto,
Tópico(s)Luminescence Properties of Advanced Materials
ResumoDoping of Ho into AgGaS2 has been carried out by the thermal diffusion of Ho element into the undoped crystal. Sharp photoluminescence (PL) lines related to the 5S2→5I8 and 5F3→5I7 transitions in the Ho3+ ion are observed in the energy regions 2.23–2.28 and 1.85–1.93 eV, respectively. Temperature dependence and excitation wavelength dependence of the PL indicate the existence of at least four types of Ho-related luminescence centers. Moreover, it is found that PL lines from different Ho-related luminescence centers exhibit different excitation and recombination mechanisms.
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